FM25V02-DG

CYPRESS SEMICONDUCTOR  FM25V02-DG  芯片, 存储器, FRAM, 512K, SPI, 8TDFN

The is a 256-Kbit non-volatile Ferroelectric Random Access Memory F-RAM, performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead and system-level reliability problems caused by serial flash, EEPROM and other non-volatile memories. Unlike serial flash and EEPROM, this performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. This is capable of supporting 1014 read/write cycles or 100 million times more write cycles than EEPROM.

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High-endurance 100trillion read/writes

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NoDelay™ writes

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Very fast serial peripheral interface

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Up to 40MHz frequency

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Direct hardware replacement for serial flash and EEPROM

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Supports SPI mode 0 0, 0 and mode 3 1, 1

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Sophisticated write protection scheme

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Low power consumption

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220µA Active current at 1MHz

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90µA Typical standby current