APT75GP120B2G 单 1200 V 100 A 1042 W 320 nC POWER MOS 7® IGBT - TO-247-3
You won"t need to worry about any lagging in your circuit with this IGBT transistor from . It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 1042000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
| 型号 | 品牌 | 下载 |
|---|---|---|
| APT75GP120B2G | Microsemi 美高森美 | 下载 |
| APT75GN60B2DQ3G | Microsemi 美高森美 | 下载 |
| APT75GN120J | Microsemi 美高森美 | 下载 |
| APT75GN120JDQ3G | Microsemi 美高森美 | 下载 |
| APT75DQ60BG | Microsemi 美高森美 | 下载 |
| APT75DQ120BG | Microsemi 美高森美 | 下载 |
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| APT75DQ100BG | Microsemi 美高森美 | 下载 |
| APT7F120B | Microsemi 美高森美 | 下载 |
| APT7F100B | Microsemi 美高森美 | 下载 |
| APT7M120B | Microsemi 美高森美 | 下载 |