T2G6003028-FL

RF Power Transistor, DC to 6GHz, 30W, 14dB, 28V, GaN

The TriQuint is a 30 W P3dB discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint"s proven 0.25 um process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

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Frequency: DC to 6 GHz * Output power P3dB: 30 W at 6 GHz * Linear gain: >14 dB at 6 GHz * Operating voltage: 28 V * Low thermal resistance package