RN2317TE85L,F

RN2317TE85L,F概述

USM PNP 50V 100mA

Thanks to "s PNP digital transistor, you can easily benefit from the characteristics of traditional BJT s while working with digital systems. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 30@10mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.25mA@5mA V. Its maximum power dissipation is 100 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.

RN2317TE85L,F数据文档
型号 品牌 下载
RN2317TE85L,F

Toshiba 东芝

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RN2307TE85L,F

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RN2312TE85L,F

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RN2303TE85L,F

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RN2311TE85L,F

Toshiba 东芝

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RN2305TE85L,F

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RN2313TE85L,F

Toshiba 东芝

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RN2302TE85L,F

Toshiba 东芝

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RN2310TE85L,F

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RN2308TE85L,F

Toshiba 东芝

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RN2301TE85L,F

Toshiba 东芝

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