IXDR30N120D1

IXYS SEMICONDUCTOR  IXDR30N120D1  单晶体管, IGBT, 隔离, 50 A, 2.4 V, 200 W, 1.2 kV, TO-247AD, 3 引脚

The IGBT transistor from Ixys Corporation is the best electronic switch for fast switching. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 200000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

得捷:
IGBT 1200V 50A 200W ISOPLUS247

立创商城:
IXDR30N120D1

贸泽:
IGBT 晶体管 30 Amps 1200V

e络盟:
单晶体管, IGBT, 隔离, 50 A, 2.4 V, 200 W, 1.2 kV, TO-247AD, 3 引脚

艾睿:
Trans IGBT Chip N-CH 1.2KV 50A 3-Pin3+Tab ISOPLUS 247

Chip1Stop:
Trans IGBT Chip N-CH 1.2KV 50A 3-Pin3+Tab ISOPLUS 247

Newark:
# IXYS SEMICONDUCTOR  IXDR30N120D1  IGBT Single Transistor, Isolated, 50 A, 2.4 V, 200 W, 1.2 kV, TO-247AD, 3 Pins