功率半导体功率模块射频功率MOSFET Power Semiconductors Power Modules RF Power MOSFETs
The infineon IGBT module from will work effectively even with higher currents. Its maximum power dissipation is 417000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This device utilizes npt technology. This IGBT driver board has an operating temperature range of -55 °C to 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| APT50GR120JD30 | Microsemi 美高森美 | 下载 |
| APT50GT120JRDQ2 | Microsemi 美高森美 | 下载 |
| APT5F100K | Microsemi 美高森美 | 下载 |
| APT50GN60BG | Microsemi 美高森美 | 下载 |
| APT50GT60BRG | Microsemi 美高森美 | 下载 |
| APT50GT60BRDQ2G | Microsemi 美高森美 | 下载 |
| APT54GA60B | Microsemi 美高森美 | 下载 |
| APT50GS60BRG | Microsemi 美高森美 | 下载 |
| APT54GA60BD30 | Microsemi 美高森美 | 下载 |
| APT53N60BC6 | Microsemi 美高森美 | 下载 |
| APT5024BLLG | Microsemi 美高森美 | 下载 |