2N 系列 120 V 1 A NPN 互补 硅 大功率晶体管 - TO-39
The three terminals of this NPN GP BJT from give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 4 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| 2N5682 | Central Semiconductor | 下载 |
| 2N5657G | ON Semiconductor 安森美 | 下载 |
| 2N5639_D26Z | Fairchild 飞兆/仙童 | 下载 |
| 2N5639_D75Z | Fairchild 飞兆/仙童 | 下载 |
| 2N5638 | Fairchild 飞兆/仙童 | 下载 |
| 2N5639 | Fairchild 飞兆/仙童 | 下载 |
| 2N5638RLRA | ON Semiconductor 安森美 | 下载 |
| 2N5638RLRAG | ON Semiconductor 安森美 | 下载 |
| 2N5639G | ON Semiconductor 安森美 | 下载 |
| 2N5639RLRAG | ON Semiconductor 安森美 | 下载 |
| 2N5638_D26Z | Fairchild 飞兆/仙童 | 下载 |