2SJ668TE16L1,NQ

2SJ668TE16L1,NQ概述

TOSHIBA  2SJ668TE16L1,NQ  晶体管, MOSFET, P沟道, 5 A, -60 V, 170 mohm, -10 V, 2 V

The is a -60V Silicon P-channel MOSFET with 4V gate drive and low drain-source ON resistance. Suitable for use in relay drive, DC/DC converter and motor drive applications.

.
High forward transfer admittance
.
Low leakage current
.
Enhancement mode
2SJ668TE16L1,NQ数据文档
型号 品牌 下载
2SJ668TE16L1,NQ

Toshiba 东芝

下载
2SJ646-TL-E

ON Semiconductor 安森美

下载
2SJ601-Z-E1-AZ

Renesas Electronics 瑞萨电子

下载
2SJ649-AZ

Renesas Electronics 瑞萨电子

下载
2SJ687-ZK-E1-AY

Renesas Electronics 瑞萨电子

下载
2SJ661-1E

ON Semiconductor 安森美

下载
2SJ661-DL-1E

ON Semiconductor 安森美

下载
2SJ673-AZ

Renesas Electronics 瑞萨电子

下载
2SJ652-1E

ON Semiconductor 安森美

下载
2SJ665-DL-E

ON Semiconductor 安森美

下载
2SJ656

ON Semiconductor 安森美

下载

锐单商城 - 一站式电子元器件采购平台