STGAP1STR

STGAP1STR概述

MOSFET DRVR 1Out High Side Non-Inv 24Pin SOIC W T/R

STMicroelectronics" power driver will help with fast switching within your circuit. This device has a maximum propagation delay time of 130 ns and a maximum power dissipation of 65 mW. Its maximum power dissipation is 65 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This gate driver has a minimum operating temperature of -40 °C and a maximum of 125 °C. This device has a minimum operating supply voltage of 4.5 V and a maximum of 36 V.

STGAP1STR数据文档
型号 品牌 下载
STGAP1STR

ST Microelectronics 意法半导体

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STGAP1ASTR

ST Microelectronics 意法半导体

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STGAP1AS

ST Microelectronics 意法半导体

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STGAP1S

ST Microelectronics 意法半导体

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