Trans GP BJT NPN 80V 1A 3Pin TO-39 Box
This specially engineered NPN GP BJT from comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 800 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V.
| 型号 | 品牌 | 下载 |
|---|---|---|
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| 2N3055 | ON Semiconductor 安森美 | 下载 |
| 2N3055AG | ON Semiconductor 安森美 | 下载 |
| 2N3053 PBFREE | Central Semiconductor | 下载 |
| 2N3057A | Microsemi 美高森美 | 下载 |
| 2N3019CSM | Semelab | 下载 |
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| 2N3053 | Semelab | 下载 |
| 2N3055H | ON Semiconductor 安森美 | 下载 |