IPB80N04S2-H4

IPB80N04S2-H4概述

OptiMOS㈢功率三极管 OptiMOS㈢ Power-Transistor

Summary of Features:

.
N-channel - Enhancement mode
.
Automotive AEC Q101 qualified
.
MSL1 up to 260°C peak reflow
.
175°C operating temperature
.
Ultra low Rdson
.
100% Avalanche tested
.
Green product RoHS compliant

Benefits:

.
world"s lowest RDS at 40V on
.
highest current capability
.
lowest switching and conduction power losses for highest thermal efficiency
.
robust packages with superior quality and reliability
.
Optimized total gate charge enables smaller driver output stages
IPB80N04S2-H4数据文档
型号 品牌 下载
IPB80N04S2-H4

Infineon 英飞凌

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Infineon 英飞凌

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IPB80N06S4L05ATMA2

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IPB80N07S405ATMA1

Infineon 英飞凌

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IPB80N06S3-07

Infineon 英飞凌

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IPB80N06S2L-H5

Infineon 英飞凌

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IPB80N06S3L-06

Infineon 英飞凌

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IPB80N06S3L-05

Infineon 英飞凌

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IPB80N08S2L-07

Infineon 英飞凌

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IPB80N06S2L-05

Infineon 英飞凌

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