STGB7H60DF

IGBT 分立，STMicroelectronics### IGBT 分立件和模块，STMicroelectronics绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。

IGBT 分立，STMicroelectronics

得捷:
IGBT 600V 14A 88W D2PAK

欧时:
### IGBT 分立，STMicroelectronics### IGBT 分立件和模块，STMicroelectronics绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。

艾睿:
Minimize the current at your gate with the STGB7H60DF IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 88000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with field stop|trench technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.

安富利:
Trans IGBT Chip N-CH 600V 14A 3-Pin D2PAK T/R

Verical:
Trans IGBT Chip N-CH 600V 14A 88000mW 3-Pin2+Tab D2PAK T/R