PXAC180602MDV1R500XUMA1

High Power RF LDMOS FET, 60W, 28V, 1805 – 1880MHz

Summary of Features:

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Broadband internal input and output matching

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Asymmetric Doherty design

\- Main: P1dB = 20 W Typ

\- Peak: P1dB = 40 W Typ

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Typical Pulsed CW performance, 1880 MHz, 28 V, 160 μs pulse width, 10% duty cycle, class AB, Doherty configuration

\- Output power at P1dB = 10 W

\- Efficiency = 58%

\- Gain at P3dB = 19 dB

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Integrated ESD protection

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Human Body Model, Class 1B per ANSI/ESDA/JEDEC JS-001

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Low thermal resistance

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Pb-free and RoHS compliant

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Package: PG-HB1DSO-4