RF Power Transistor,1.8 to 2000MHz, 100W, Typ Gain in dB is 27.2 @ 512MHz, 50V, LDMOS, SOT1826
* Wide Operating Frequency Range * Extremely Rugged * Unmatched, Capable of Very Broadband Operation * Integrated Stability Enhancements * Low Thermal Resistance * Integrated ESD Protection Circuitry * In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel
得捷:
FET RF 2CH 133V 512MHZ NI780
艾睿:
Trans RF MOSFET N-CH 133V 5-Pin NI-780S T/R
安富利:
Trans MOSFET N-CH 133V 4-Pin NI-780S T/R
Verical:
Trans RF MOSFET N-CH 133V 5-Pin NI-780S T/R
RfMW:
RF Power Transistor,1.8 to 2000 MHz, 100 W, Typ Gain in dB is 27.2 @ 512 MHz, 50 V, LDMOS, SOT1826
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