IPB057N06NATMA1

INFINEON  IPB057N06NATMA1  晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0049 ohm, 10 V, 2.8 V

OptiMOS™5 功率 MOSFET

得捷:
MOSFET N-CH 60V 17A/45A D2PAK

立创商城:
N沟道 60V 17A 45A

欧时:
Infineon OptiMOS 5 系列 Si N沟道 MOSFET IPB057N06NATMA1, 45 A, Vds=60 V, 3引脚 D2PAK TO-263封装

艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The IPB057N06NATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 3000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.

安富利:
Trans MOSFET N-CH 60V 45A 3-Pin TO-263 T/R

TME:
Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO263-3

Verical:
Trans MOSFET N-CH 60V 45A 3-Pin2+Tab D2PAK T/R

Newark:
# INFINEON  IPB057N06NATMA1  MOSFET Transistor, N Channel, 45 A, 60 V, 0.0049 ohm, 10 V, 2.8 V