2个N沟道 40V 6A
General Description
The uses advanced trench technology MOSFETs to provide excellent RDSON and low gate charge. This dual device is suitable for use as a load switch or in PWM applications.
Product Summary
VDS 40V
ID at VGS=10V 6A
RDSON at VGS=10V < 30mΩ
RDSON at VGS=4.5V < 38mΩ
100% UIS Tested
100% Rg Tested
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