LC3564BS

64K 8192-word ´ 8Bit SRAM with OE, CE1, and CE2 Control Pins

Overview

The LC3564B, , LC3564BM, and LC3564BT are 8192-word ×8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current.

Features

• Supply voltage range:  2.7 to 5.5 V

— In 5-V operation mode: 5.0 V ±10%

— In 3-V operation mode: 3.0 V ±10%

• Address access time tAA

— In 5-V operation mode:

  LC3564B, BS, BM, and BT-70: 70 ns max

  LC3564B, BS, BM, and BT-10: 100 ns max

— In 3-V operation mode:

  LC3564B, BS, BM, and BT-70: 200 ns max

  LC3564B, BS, BM, and BT-10: 500 ns max

• Ultralow standby current

— In 5-V operation mode: 1.0 µA Ta ≤70°C, 3.0 µA Ta ≤85°C

— In 3-V operation mode: 0.8 µA Ta ≤70°C, 2.5 µA Ta ≤85°C

• Operating temperature range

— In 5-V operation mode: –40 to 85°C

— In 3-V operation mode: –40 to 85°C

• Data retention supply voltage: 2.0 to 5.5 V

• All input and output levels:

— In 5-V operation mode: TTL compatible levels

— In 3-V operation mode: VCC –0.2 V/0.2 V

• Three control inputs: OE, CE1, and CE2

• Shared input and output pins, three-state outputs

• No clock required

• Packages

  28-pin DIP 600 mil plastic package: LC3564B

  28-pin DIP 300 mil plastic package: LC3564BS

  28-pin SOP 450 mil plastic package: LC3564BM

  28-pin TSOP 8 ×13.4 mm plastic package: LC3564BT