VISHAY SIHG22N60E-E3 功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 2 V
The is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.
| 型号 | 品牌 | 下载 |
|---|---|---|
| SIHG22N60E-E3 | Vishay Semiconductor 威世 | 下载 |
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