DIODES INC. BSS123TA 晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.2 V
The is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. It is produced using DIODES proprietary high density uses advanced Trench technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and switching applications.
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