STMICROELECTRONICS 2ST2121 单晶体管 双极, PNP, -250 V, 25 MHz, 250 W, -17 A, 80 hFE
Bipolar BJT Transistor PNP 250V 17A 25MHz 250W Chassis Mount TO-3
得捷:
TRANS PNP 250V 17A TO3
e络盟:
单晶体管 双极, PNP, -250 V, 25 MHz, 250 W, -17 A, 80 hFE
艾睿:
Compared to other transistors, the PNP 2ST2121 general purpose bipolar junction transistor, developed by STMicroelectronics, can offer a high-voltage solution in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 250000 mW. The component will be shipped in tray format. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 250 V and a maximum emitter base voltage of 6 V.
Chip1Stop:
Trans GP BJT PNP 250V 17A 3-Pin2+Tab TO-3 Tray
Verical:
Trans GP BJT PNP 250V 17A 3-Pin2+Tab TO-3 Tray