BSP316PH6327XTSA1

P-沟道 100 V 0.68 A 1.8 Ω 5.1 nC SipMOS 小信号 晶体管 - SOT-223

表面贴装型 P 通道 100 V 680mA（Ta） 1.8W（Ta） PG-SOT223-4

得捷:
MOSFET P-CH 100V 680MA SOT223-4

欧时:
Infineon BSP316PH6327XTSA1

e络盟:
晶体管, MOSFET, P沟道, -680 mA, -100 V, 1.4 ohm, -10 V, -1.5 V

艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; BSP316PH6327XTSA1 power MOSFET can provide a solution. Its maximum power dissipation is 1800 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with sipmos technology.

安富利:
Trans MOSFET P-CH -100V -0.68A 4-Pin SOT-223 T/R

TME:
Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223

Verical:
Trans MOSFET P-CH 100V 0.68A Automotive 4-Pin3+Tab SOT-223 T/R

Win Source:
MOSFET P-CH 100V 0.68A SOT223