RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
The most common usage for this RF MOSTFET from STMicroelectronics is in this power amplification mode. Its maximum power dissipation is 20000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. Its maximum frequency is 945 MHz. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. This N channel RF power MOSFET operates in enhancement mode.
| 型号 | 品牌 | 下载 |
|---|---|---|
| PD57006TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD57002-E | ST Microelectronics 意法半导体 | 下载 |
| PD57006STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD57006S-E | ST Microelectronics 意法半导体 | 下载 |
| PD57006-E | ST Microelectronics 意法半导体 | 下载 |
| PD57030-E | ST Microelectronics 意法半导体 | 下载 |
| PD57060-E | ST Microelectronics 意法半导体 | 下载 |
| PD57070-E | ST Microelectronics 意法半导体 | 下载 |
| PD57060S-E | ST Microelectronics 意法半导体 | 下载 |
| PD57045TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD57018STR-E | ST Microelectronics 意法半导体 | 下载 |