BSZ036NE2LSATMA1

INFINEON  BSZ036NE2LSATMA1  晶体管, MOSFET, N沟道, 40 A, 25 V, 0.003 ohm, 10 V, 2 V

OptiMOS™ 功率 MOSFET 系列

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

N 通道 - 增强模式

符合汽车 AEC Q101 规格

MSL1 高达 260°C 峰值回流焊接

175°C 工作温度

绿色封装（无铅）

超低 Rdson

欧时:
Infineon OptiMOS 系列 Si N沟道 MOSFET BSZ036NE2LSATMA1, 40 A, Vds=25 V, 8引脚 TSDSON封装

得捷:
MOSFET N-CH 25V 16A/40A TSDSON

e络盟:
功率场效应管, MOSFET, N沟道, 25 V, 40 A, 0.003 ohm, TSDSON, 表面安装

艾睿:
Use Infineon Technologies&s; BSZ036NE2LSATMA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 2100 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans MOSFET N-CH 25V 16A 8-Pin TSDSON T/R

TME:
Transistor: N-MOSFET; unipolar; 25V; 40A; 37W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 25V 16A 8-Pin TSDSON EP T/R

Newark:
# INFINEON  BSZ036NE2LSATMA1  MOSFET Transistor, N Channel, 40 A, 25 V, 0.003 ohm, 10 V, 2 V