MOSFET N-CH 250V 630mA 4-DIP
Description
Third Generation HEXFETs from provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
RDSON Specified at VGS = 4V & 5V
Fast Switching
Ease of paralleling
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