N沟道600V - 19A - TO- 220 - TO- 247超高速IGBT PowerMESH⑩ N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH⑩ IGBT
You won"t need to worry about any lagging in your circuit with this IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 125000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| STGP19NC60WD | ST Microelectronics 意法半导体 | 下载 |
| STGP10NC60HD | ST Microelectronics 意法半导体 | 下载 |
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| STGP30NC60W | ST Microelectronics 意法半导体 | 下载 |
| STGP7NC60H | ST Microelectronics 意法半导体 | 下载 |
| STGP30H65F | ST Microelectronics 意法半导体 | 下载 |
| STGP35HF60W | ST Microelectronics 意法半导体 | 下载 |
| STGP30H60DF | ST Microelectronics 意法半导体 | 下载 |
| STGP35N35LZ | ST Microelectronics 意法半导体 | 下载 |
| STGP19NC60HD | ST Microelectronics 意法半导体 | 下载 |
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