IGBT 晶体管 1250V 20A trench gte field-stop IGBT
This powerful and secure IGBT transistor from STMicroelectronics will make sure your circuit works properly. It has a maximum collector emitter voltage of 1250 V. Its maximum power dissipation is 259000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.
| 型号 | 品牌 | 下载 |
|---|---|---|
| STGWT20IH125DF | ST Microelectronics 意法半导体 | 下载 |
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| STGWT30H65FB | ST Microelectronics 意法半导体 | 下载 |
| STGWT30H60DFB | ST Microelectronics 意法半导体 | 下载 |
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| STGWT40H60DLFB | ST Microelectronics 意法半导体 | 下载 |
| STGWT40H65DFB | ST Microelectronics 意法半导体 | 下载 |
| STGW30H60DFB | ST Microelectronics 意法半导体 | 下载 |
| STGWT20H60DF | ST Microelectronics 意法半导体 | 下载 |
| STGWT30V60F | ST Microelectronics 意法半导体 | 下载 |