SI7617DN-T1-GE3

SI7617DN-T1-GE3概述

VISHAY  SI7617DN-T1-GE3  场效应管, MOSFET, P沟道, -35V, 35A, 整卷

The is a -30V P-channel TrenchFET® Power MOSFET. Suitable for use in notebook battery charging and adapter switch applications. The P-channel MOSFET for switching applications are now available with die on resistances around 1mR and with the capability to handle 85A.

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Halogen-free according to IEC 61249-2-21 definition
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100% Rg Tested
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100% UIS Tested
SI7617DN-T1-GE3数据文档
型号 品牌 下载
SI7617DN-T1-GE3

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SI7623DN-T1-GE3

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SI7611DN-T1-GE3

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