NXP PBSS8110T 单晶体管 双极, NPN, 100 V, 300 mW, 1 A, 150 hFE
The is a 1A NPN breakthrough-in small signal BISS Transistor housed in a surface-mount plastic package.
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Low collector-emitter saturation voltage VCEsat
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High collector current capability IC and ICM
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Higher efficiency leading to less heat generation
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Reduced printed-circuit board requirements
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PNP complement is PBSS9110T
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U8 Marking code