Trans GP BJT NPN 50V 0.5A 625mW 3Pin TO-92 Box
Add switching and amplifying capabilities to your electronic circuit with this NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| 2N3417 PBFREE | Central Semiconductor | 下载 |
| 2N3417_D89Z | Fairchild 飞兆/仙童 | 下载 |
| 2N3415_D74Z | Fairchild 飞兆/仙童 | 下载 |
| 2N3416_D27Z | Fairchild 飞兆/仙童 | 下载 |
| 2N3440 | ST Microelectronics 意法半导体 | 下载 |
| 2N3415 PBFREE | Central Semiconductor | 下载 |
| 2N3439 | ST Microelectronics 意法半导体 | 下载 |
| 2N3440 PBFREE | Central Semiconductor | 下载 |
| 2N3442G | ON Semiconductor 安森美 | 下载 |
| 2N3403 | Central Semiconductor | 下载 |
| 2N3418 | Microsemi 美高森美 | 下载 |