Trans IGBT Chip N-CH 1700V 32A 350000mW 3Pin3+Tab TO-247AD
This IGBT transistor from Ixys Corporation will work perfectly in your circuit. Its maximum power dissipation is 350000 mW. It has a maximum collector emitter voltage of 1700 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
得捷:
IGBT 1700V 32A 350W TO247
艾睿:
Trans IGBT Chip N-CH 1.7KV 32A 3-Pin3+Tab TO-247AD
Verical:
Trans IGBT Chip N-CH 1700V 32A 350000mW 3-Pin3+Tab TO-247AD
DeviceMart:
IGBT HIGH VOLTAGE 1700V TO247
Win Source:
IGBT 1700V 32A 350W TO247 / IGBT NPT 1700 V 32 A 350 W Through Hole TO-247AD
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