K6T1008C2E-GB70

K6T1008C2E-GB70概述

SRAM Chip Async Single 5V 1M-bit 128K x 8 70ns 32Pin SOP

GENERAL DESCRIPTION

The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.

FEATURES

·Process Technology: TFT

·Organization: 128Kx8

·Power Supply Voltage: 4.5~5.5V

·Low Data Retention Voltage: 2VMin

·Three state output and TTL Compatible

·Package Type: 32-DIP-600, 32-SOP-525,32-TSOP1-0820F/R

K6T1008C2E-GB70数据文档
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