Trans IGBT Module N-CH 600V 42A 130000mW 25Pin
IGBT 模块 NPT 三相反相器，带制动器 底座安装 E1
得捷:
IGBT MODULE 600V 42A 130W E1
艾睿:
The MUBW35-06A6K infineon IGBT module from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 130000 mW. It is made in a hex configuration. This IGBT driver board has a minimum operating temperature of -40 °C and a maximum of 125 °C.
Verical:
Trans IGBT Module N-CH 600V 42A 130000mW 25-Pin
| 型号 | 品牌 | 下载 |
|---|---|---|
| MUBW35-06A6K | IXYS Semiconductor | 下载 |
| MUBW35-06A6 | IXYS Semiconductor | 下载 |
| MUBW30-12E6K | IXYS Semiconductor | 下载 |
| MUBW35-12E7 | IXYS Semiconductor | 下载 |
| MUBW15-06A6 | IXYS Semiconductor | 下载 |
| MUBW10-06A6 | IXYS Semiconductor | 下载 |
| MUBW50-12E8 | IXYS Semiconductor | 下载 |
| MUBW15-12A6 | IXYS Semiconductor | 下载 |
| MUBW25-06A6 | IXYS Semiconductor | 下载 |
| MUBW30-12A6 | IXYS Semiconductor | 下载 |
| MUBW75-12T8 | IXYS Semiconductor | 下载 |