IPW50R199CPFKSA1

晶体管, MOSFET, N沟道, 17 A, 550 V, 0.18 ohm, 10 V, 3 V

The IPW50R199CP is a CoolMOS™ N-channel Power MOSFET with ultra-low gate charge and high peak current capability.

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Lowest figure of merit Ron x Qg

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Extreme dV/dt rate

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Ultra low RDS ON, very fast switching

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Very low internal Rg

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High peak current capability

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Significant reduction of conduction and switching losses

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High power density and efficiency for superior power conversion systems

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Best-in-class performance ratio

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Qualified according to JEDEC for target applications

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Green device