BFG35,115

NXP  BFG35,115  晶体管 双极-射频, NPN, 18 V, 4 GHz, 1 W, 150 mA, 70 hFE

射频双极，Nexperia

得捷:
RF TRANS NPN 18V 4GHZ SOT223

欧时:
NXP BFG35,115 , NPN 晶体管, 150 mA, Vce=18 V, HFE:25, 4000 MHz, 4引脚 SOT-223 SC-73封装

e络盟:
晶体管 双极-射频, NPN, 18 V, 4 GHz, 1 W, 150 mA, 70 hFE

艾睿:
This BFG35,115 RF amplifier from NXP Semiconductors offers superior characteristics as compared to RF MOSFETS allowing it to operate at higher RF frequencies. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 175 °C.

安富利:
Trans GP BJT NPN 18V 0.15A 4-Pin3+Tab SOT-223 T/R

Chip1Stop:
Trans GP BJT NPN 18V 0.15A 4-Pin3+Tab SC-73 T/R

Verical:
Trans RF BJT NPN 18V 0.15A 1000mW 4-Pin3+Tab SC-73 T/R

Newark:
# NXP  BFG35,115  Bipolar - RF Transistor, Wideband, NPN, 18 V, 4 GHz, 1 W, 150 mA, 70 hFE

RfMW:
Transistor

DeviceMart:
TRANS NPN 10V 150MA SOT223

Win Source:
TRANS NPN 10V 150MA SOT223