IRLML6401TRPBF

-4.3A,-12V,P沟道功率MOSFET

These P-Channel MOSFETs from utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device

for use in battery and load management. A thermally enhanced large pad lead frame has been incorporated into the standard SOT-23 package to produce a HEXFET® Power MOSFET with the industry"s smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile <1.1 mm of the Micro3™ allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.

**Features:**

* Ultra Low On-Resistance

* P-Channel MOSFET

* SOT-23 Footprint

* Low Profile <1.1 mm

* Available in Tape and Reel

* Fast Switching

* 1.8 V Gate Rated