IXFX360N15T2

IXFX360N15T2概述

N沟道 150V 360A

N-Channel 150V 360A Tc 1670W Tc Through Hole PLUS247™-3


立创商城:
N沟道 150V 360A


得捷:
MOSFET N-CH 150V 360A PLUS247-3


贸泽:
MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET


艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the IXFX360N15T2 power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 1670000 mW. This device utilizes gigamos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.


Verical:
Trans MOSFET N-CH 150V 360A 3-Pin3+Tab PLUS 247


DeviceMart:
MOSFET N-CH 150V 360A PLUS247


IXFX360N15T2数据文档
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IXFX360N15T2

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