放大器晶体管 Amplifier Transistors
The PNP general purpose bipolar junction transistor, developed by , is the perfect solution for your high-current density needs. This bipolar junction transistor"s maximum emitter base voltage is 4 V. Its maximum power dissipation is 625 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 4 V.
| 型号 | 品牌 | 下载 |
|---|---|---|
| MPSA55RLRAG | ON Semiconductor 安森美 | 下载 |
| MPSA29 | Fairchild 飞兆/仙童 | 下载 |
| MPSA56 | Fairchild 飞兆/仙童 | 下载 |
| MPSA05RLRAG | ON Semiconductor 安森美 | 下载 |
| MPSA06RL1G | ON Semiconductor 安森美 | 下载 |
| MPSA56_D27Z | Fairchild 飞兆/仙童 | 下载 |
| MPSA18RLRAG | ON Semiconductor 安森美 | 下载 |
| MPSA56G | ON Semiconductor 安森美 | 下载 |
| MPSA27RLRAG | ON Semiconductor 安森美 | 下载 |
| MPSA64G | ON Semiconductor 安森美 | 下载 |
| MPSA29G | ON Semiconductor 安森美 | 下载 |