NSS20201LT1G

NSS20201LT1G概述

NSS 系列 20 V 2 A 表面贴装 低 Vce NPN 晶体管 - SOT-23

Look no further than "s NPN general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 540 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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NSS20201LT1G

ON Semiconductor 安森美

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NSS20200LT1G

ON Semiconductor 安森美

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