Trans IGBT Chip N-CH 1200V 64A 357000mW 3Pin3+Tab T-MAX
You can use this IGBT transistor from as an electronic switch. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 357000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
型号 | 品牌 | 下载 |
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APT33GF120B2RDQ2G | Microsemi 美高森美 | 下载 |
APT30GT60KRG | Microsemi 美高森美 | 下载 |
APT30DQ60KG | Microsemi 美高森美 | 下载 |
APT30DQ100KG | Microsemi 美高森美 | 下载 |
APT30D60BG | Microsemi 美高森美 | 下载 |
APT30DQ60BG | Microsemi 美高森美 | 下载 |
APT30DQ120KG | Microsemi 美高森美 | 下载 |
APT30DQ100BG | Microsemi 美高森美 | 下载 |
APT30D40B | Microsemi 美高森美 | 下载 |
APT30S20BCTG | Microsemi 美高森美 | 下载 |
APT30S20BG | Microsemi 美高森美 | 下载 |