IPD025N06NATMA1

INFINEON  IPD025N06NATMA1  晶体管, MOSFET, N沟道, 90 A, 60 V, 0.0021 ohm, 10 V, 2.8 V

OptiMOS™5 功率 MOSFET

欧时:
Infineon OptiMOS 5 系列 Si N沟道 MOSFET IPD025N06NATMA1, 90 A, Vds=60 V, 3引脚 DPAK TO-252封装

得捷:
MOSFET N-CH 60V 90A TO252-3

立创商城:
N沟道 60V 90A

e络盟:
功率场效应管, MOSFET, N沟道, 60 V, 90 A, 0.0021 ohm, TO-252 DPAK, 表面安装

艾睿:
Make an effective common source amplifier using this IPD025N06NATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 60V 90A 3-Pin TO-252 T/R

TME:
Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO252-3

Verical:
Trans MOSFET N-CH 60V 90A 3-Pin2+Tab DPAK T/R

Newark:
# INFINEON  IPD025N06NATMA1  MOSFET Transistor, N Channel, 90 A, 60 V, 0.0021 ohm, 10 V, 2.8 V

Win Source:
MOSFET N-CH 60V 26A TO252-3