NXP PBSS5120T 单晶体管 双极, PNP, 20 V, 300 mW, 1 A, 450 hFE
The is a 1A PNP breakthrough-in small signal BISS Transistor in a surface-mount plastic package provides ultra-low VCEsat and RCEsat parameters.
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Low collector-emitter saturation voltage VCEsat
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High collector current capability IC and ICM
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High efficiency leading to less heat generation
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Reduced printed-circuit board requirements
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NPN complement is PBSS4120T
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3K Marking code