SBC847CDXV6T1G

SBC847 系列 45 V 0.1 A 表面贴装 双 通用 晶体管 - SOT-563

- 双极 BJT - 阵列 2 NPN（双） 45V 100mA 100MHz 500mW 表面贴装型 SOT-563

得捷:
TRANS 2NPN 45V 0.1A SOT-563

立创商城:
SBC847CDXV6T1G

贸泽:
双极晶体管 - 双极结型晶体管BJT SS GP XSTR NPN 45V

艾睿:
The NPN SBC847CDXV6T1G general purpose bipolar junction transistor, developed by ON Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.

安富利:
Trans GP BJT NPN 45V 0.1A 6-Pin SOT-563 T/R

Verical:
Trans GP BJT NPN 45V 0.1A 500mW Automotive 6-Pin SOT-563 T/R

Win Source:
TRANS 2NPN 45V 0.1A SOT-563 / Bipolar BJT Transistor Array 2 NPN Dual 45V 100mA 100MHz 500mW Surface Mount SOT-563