IXFN32N120

IXYS SEMICONDUCTOR  IXFN32N120  功率场效应管, MOSFET, N沟道, 32 A, 1.2 kV, 350 mohm, 10 V, 5 V

The is a 1200V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode HiPerFET™ and low RDS on HDMOS™ process. The IXYS most popular power MOSFET HiPerFET™ is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.

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miniBLOC with aluminium nitride isolation

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Rugged polysilicon gate cell structure

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Unclamped Inductive Switching UIS rated

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Low inductance

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High power density

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Easy to mount

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Space-saving s