TC74AC10F

CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

Triple 3-Input NAND Gate

The TC74AC10 is an advanced high speed CMOS 3-INPUT NAND GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology.

It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.

The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage.

Features

• High speed: tpd = 5.0 ns typ. at VCC = 5 V

• Low power dissipation: ICC = 4 μA max at Ta = 25°C

• High noise immunity: VNIH = VNIL = 28% VCC min

• Symmetrical output impedance: |IOH| = IOL = 24 mA min

                                             Capability of driving 50 Ω

                                              transmission lines.

• Balanced propagation delays: tpLH ∼ − tpHL

• Wide operating voltage range: VCC opr = 2 to 5.5 V

• Pin and function compatible with 74F10