IXFK44N50P

N沟道 500V 44A

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

VDSS = 500 V

ID25 = 44 A

RDSon ≤140 mΩ

trr ≤200 ns

Features

International standard packages

Unclamped Inductive Switching UIS rated

Low package inductance

\- easy to drive and to protect

得捷:
MOSFET N-CH 500V 44A TO264AA

立创商城:
N沟道 500V 44A

贸泽:
MOSFET 500V 44A

艾睿:
Thanks to Ixys Corporation, both your amplification and switching needs can be taken care of with one component: the IXFK44N50P power MOSFET. Its maximum power dissipation is 650000 mW. This device is made with hiperfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

TME:
Transistor: N-MOSFET; unipolar; 500V; 44A; 500W; TO264

Verical:
Trans MOSFET N-CH 500V 44A 3-Pin3+Tab TO-264

DeviceMart:
MOSFET N-CH 500V 44A TO-264