SI5475DDC-T1-GE3数据手册PDF_SI5475DDC-T1-GE3中文资料-锐单商城

SI5475DDC-T1-GE3概述

VISHAY SI5475DDC-T1-GE3 晶体管, MOSFET, P沟道, -6 A, -12 V, 26 mohm, -4.5 V, -400 mV

The is a 12VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications.

贸泽:
MOSFET 12V 6.0A 5.7W 32mohm @ 4.5V

e络盟:
VISHAY SI5475DDC-T1-GE3 晶体管, MOSFET, P沟道, -6 A, -12 V, 26 mohm, -4.5 V, -400 mV

艾睿:
Trans MOSFET P-CH 12V 6A 8-Pin Chip FET T/R

安富利:
Trans MOSFET P-CH 12V 6A 8-Pin Chip FET T/R

富昌:
p 沟道 12 V 0.032 Ohm 表面贴装功率 Mosfet - ChipFET-1206-8

Verical:
Trans MOSFET P-CH 12V 6A 8-Pin Chip FET T/R

Newark:
# VISHAY SI5475DDC-T1-GE3 MOSFET Transistor, P Channel, -6 A, -12 V, 26 mohm, -4.5 V, -400 mV

SI5475DDC-T1-GE3数据文档