AT28LV010-20TU

ATMEL  AT28LV010-20TU  EEPROM, 1 Mbit, 128K x 8位, 并行, TSOP, 32 引脚

The is a 1MB high-performance 3V Electrically Erasable and Programmable Read-Only Memory organized as 131072 words by 8-bit. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200ns with power dissipation of just 54mW. When the device is deselected, the CMOS standby current is less than 20µA. The AT28LV010 is accessed like a static RAM for the read or write cycle without the need for external components. The device contains a 128-byte page register to allow writing of up to 128-byte simultaneously. During a write cycle, the address and 1 to 128-byte of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by DATA polling of I/O7. Once the end of a write cycle has been detected a new access for a read or write can begin.

.

Automatic page write operation

.

Fast write cycle times

.

Low power dissipation

.

Hardware and software data protection

.

Data polling for end of write detection

.

High reliability CMOS technology

.

Endurance - 10⁵ cycles

.

Data retention - 10 years

.

JEDEC Approved byte-wide pinout

.

Green product and no Sb/Br