IPD60R950C6ATMA1数据手册PDF_IPD60R950C6ATMA1中文资料-锐单商城

IPD60R950C6ATMA1概述

INFINEON IPD60R950C6ATMA1 功率场效应管, MOSFET, N沟道, 5.7 A, 650 V, 0.68 ohm, 10 V, 3 V

CoolMOS™C6/C7 功率 MOSFET

得捷:
MOSFET N-CH 600V 4.4A TO252-3

欧时:
Infineon CoolMOS C6 系列 Si N沟道 MOSFET IPD60R950C6ATMA1, 4.4 A, Vds=650 V, 3引脚 DPAK TO-252封装

立创商城:
N沟道 600V 4.4A

贸泽:
MOSFET N-Ch 650V 4.4A DPAK-2

e络盟:
INFINEON IPD60R950C6ATMA1 功率场效应管, MOSFET, N沟道, 5.7 A, 650 V, 0.68 ohm, 10 V, 3 V

艾睿:
Trans MOSFET N-CH 600V 4.4A 3-Pin2+Tab DPAK T/R

Verical:
Trans MOSFET N-CH 600V 4.4A 3-Pin2+Tab DPAK T/R

Newark:
# INFINEON IPD60R950C6ATMA1 Power MOSFET, CoolMOS, N Channel, 5.7 A, 650 V, 0.68 ohm, 10 V, 3 V

Win Source:
MOSFET N-CH 600V 4.4A TO252

IPD60R950C6ATMA1数据文档