BSZ0902NSATMA1

INFINEON  BSZ0902NSATMA1  晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0022 ohm, 10 V, 2 V

OptiMOS™ 功率 MOSFET 系列

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

N 通道 - 增强模式

符合汽车 AEC Q101 规格

MSL1 高达 260°C 峰值回流焊接

175°C 工作温度

绿色封装（无铅）

超低 Rdson

得捷:
MOSFET N-CH 30V 19A/40A TSDSON

立创商城:
N沟道 30V 40A 19A

欧时:
Infineon OptiMOS 系列 Si N沟道 MOSFET BSZ0902NSATMA1, 40 A, Vds=30 V, 8引脚 TSDSON封装

贸泽:
MOSFET LV POWER MOS

艾睿:
As an alternative to traditional transistors, the BSZ0902NSATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2100 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.

安富利:
Trans MOSFET N-CH 30V 25A 8-Pin TSDSON EP T/R

TME:
Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 30V 19A 8-Pin TSDSON EP T/R

Newark:
# INFINEON  BSZ0902NSATMA1  MOSFET Transistor, N Channel, 40 A, 30 V, 0.0022 ohm, 10 V, 2 V