IPB110N20N3LFATMA1

晶体管, MOSFET, N沟道, 88 A, 200 V, 0.0098 ohm, 10 V, 3.2 V

Description:

OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance R DSon and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DSon of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

Summary of Features:

.

Combination of low R DSon and wide safe operating area SOA

.

High max. pulse current

.

High continuous pulse current

Benefits:

.

Rugged linear mode operation

.

Low conduction losses

.

Higher in-rush current enabled for faster start-up and shorter down time